THE EPO seems eager to attract patent trolls, having clearly failed to heed warnings from the United States. China has made similar mistakes and belatedly realised that.
"A lot of the research in question was funded by taxpayers; this begs the question, why were patents pursued in the first place and why are these being litigated over (through a sort of proxy, the "Trustees of Boston University")? It's unjust."A few days ago Kluwer Patent Blog wrote about the High Court in the UK dealing with Boston Scientific Scimed, which deals with medical devices and is formally based in Marlborough, Massachusetts. Just shortly before that we saw Boston University mentioned in relation to a District Court and the Federal Circuit, especially in the case of Everlight Electronics (recently, as in last week, covered here in passing, taking note of Boston University's past with patents). Patent Docs wrote about it some days ago, speaking about the patent's (granted by the USPTO) particulars:
The '738 patent describes a method for producing GaN semiconductors using a form of epitaxy termed molecular beam epitaxy, which is "a two step process comprising a low temperature nucleation step and a high temperature growth step." This produces a first buffer layer of amorphous GaN when heated in the second step to "crystallize the amorphous layer." This permits monocrystalline GaN to be grown on the crystallized substrate layer.
The District Court construed the term "grown on" to mean "formed indirectly or directly above," and construed the term "a non-single crystalline buffer layer" to mean "a layer of material that is not monocrystalline," i.e., one that is polycrystalline, amorphous, or a mixture of amorphous and polycrystalline, and that is "located between the first substrate and the first growth layer." The parties' disagreement, and the Federal Circuit's opinion, concerned construction of the term "grown on."